tip135, TIP136, tip137 pnp silicon power darlingtons
1 june 1973 - revised september 2002 specifications are subject to change without notice. designed for complementary use with tip130, tip131 and tip132 70 w at 25c case temperature 8 a continuous collector current minimum h fe of 1000 at 4 v, 4 a b c e to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdtraca 1 2 3 absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. this value applies for t p 0.3 ms, duty cycle 10%. 2. derate linearly to 150c case temperature at the rate of 0.56 w/c. 3. derate linearly to 150c free air temperature at the rate of 16 mw/c. 4. this rating is based on the capability of the transistor to operate safely in a circuit of: l = 20 mh, i b(on) = -5 ma, r be = 100 ? , v be(off) = 0, r s = 0.1 ? , v cc = -20 v. rating symbol value unit collector-base voltage (i e = 0) tip135 TIP136 tip137 v cbo -60 -80 -100 v collector-emitter voltage (i b = 0) tip135 TIP136 tip137 v ceo -60 -80 -100 v emitter-base voltage v ebo -5 v continuous collector current i c -8 a peak collector current (see note 1) i cm -12 a continuous base current i b -0.3 a continuous device dissipation at (or below) 25c case temperature (see note 2) p tot 70 w continuous device dissipation at (or below) 25c free air temperature (see note 3) p tot 2w unclamped inductive load energy (see note 4) ?li c 2 75 mj operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c lead temperature 3.2 mm from case for 10 seconds t l 260 c
tip135, TIP136, tip137 pnp silicon power darlingtons 2
june 1973 - revised september 2002 specifications are subject to change without notice. notes: 5. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 6. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. electrical characteristics at 25c case temperature parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = -30 ma i b = 0 (see note 5) tip135 TIP136 tip137 -60 -80 -100 v i ceo collector-emitter cut-off current v ce = -30 v v ce = -40 v v ce = -50 v i b =0 i b =0 i b =0 tip135 TIP136 tip137 -0.5 -0.5 -0.5 ma i cbo collector cut-off current v cb = -60 v v cb = -80 v v cb = -100 v v cb = -60 v v cb = -80 v v cb = -100 v i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 t c = 100c t c = 100c t c = 100c tip135 TIP136 tip137 tip135 TIP136 tip137 -0.2 -0.2 -0.2 -1 -1 -1 ma i ebo emitter cut-off current v eb = -5 v i c =0 -5 ma h fe forward current transfer ratio v ce = -4 v v ce = -4 v i c =-1a i c =-4a (see notes 5 and 6) 500 1000 15000 v ce(sat) collector-emitter saturation voltage i b = -16 ma i b = -30 ma i c =-4a i c =-6a (see notes 5 and 6) -2 -3 v v be base-emitter voltage v ce = -4 v i c = -4 a (see notes 5 and 6) -2.5 v c obo output capacitance v cb = -10 v i e =0 200 pf v ec parallel diode forward voltage i e = -8 a i b = 0 (see notes 5 and 6) -3.5 v thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 1.78 c/w r ja junction to free air thermal resistance 62.5 c/w
tip135, TIP136, tip137 pnp silicon power darlingtons 3
june 1973 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a -05 -10 -10 h fe - typical dc current gain 50000 100 1000 10000 tcs135aa t c = -40c t c = 25c t c = 100c v ce = -4 v t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs collector current i c - collector current - a -05 -10 -10 v ce(sat) - collector-emitter saturation voltage - v -20 -15 -10 -05 tcs135ab t c = -40c t c = 25c t c = 100c t p = 300 s, duty cycle < 2% i b = i c / 100 base-emitter saturation voltage vs collector current i c - collector current - a -05 -10 -10 v be(sat) - base-emitter saturation voltage - v -30 -25 -20 -15 -10 -05 tcs135ac t c = -40c t c = 25c t c = 100c i b = i c / 100 t p = 300 s, duty cycle < 2%
tip135, TIP136, tip137 pnp silicon power darlingtons 4
june 1973 - revised september 2002 specifications are subject to change without notice. maximum safe operating regions figure 4. thermal information figure 5. maximum forward-bias safe operating area v ce - collector-emitter voltage - v -10 -10 -100 -1000 i c - collector current - a -0.01 -01 -10 -10 sas135ab tip135 TIP136 tip137 maximum power dissipation vs case temperature t c - case temperature - c 0 255075100125150 p tot - maximum power dissipation - w 0 10 20 30 40 50 60 70 80 tis130ab
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